Impact of using Octogonal Layout Style in Planar Power MOSFETs

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dc.contributor.authorDA SILVA, G. A.
dc.contributor.authorSalvador Gimenez
dc.date.accessioned2022-11-01T06:04:21Z
dc.date.available2022-11-01T06:04:21Z
dc.date.issued2022-08-22
dc.description.abstract© 2022 IEEE.Previous studies have already shown that the use of alternative gate shapes for planar and tridimensional MOSFETs are capable of boosting their analog and digital electrical performances and their ionizing radiations robustness. In this scenario, this work has the objective to study the impact of the use of octagonal layout style (OCTO), as the basic cell, to the implementing of the Planar Power MOSFET (PPM). The main results of this paper show that the PPM layouted with OCTO layout styles, as the basic cells, are able to improve the drain saturation current (IDS-sat) about 668%%, in relation to that implemented with conventional rectangular layout style, considering that they present the same gate area and bias conditions. Therefore, this type of layout approach can be considered an alternative layout to improve the electrical performance of PPMs.
dc.identifier.citationDA SILVA, G. A.; GIMEZES, S. Impact of using Octogonal Layout Style in Planar Power MOSFETs. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
dc.identifier.doi10.1109/SBMICRO55822.2022.9881042
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4626
dc.relation.ispartof36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.rightsAcesso Restrito
dc.titleImpact of using Octogonal Layout Style in Planar Power MOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85139237101
fei.scopus.subjectBias conditions
fei.scopus.subjectCell-be
fei.scopus.subjectCell/B.E
fei.scopus.subjectCell/BE
fei.scopus.subjectDrain saturation current
fei.scopus.subjectElectrical performance
fei.scopus.subjectMOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85139237101&origin=inward
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