High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorMichelly De Souza
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorESTRADA, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorPavanello M. A.
dc.date.accessioned2023-05-01T06:02:51Z
dc.date.available2023-05-01T06:02:51Z
dc.date.issued2023-01-05
dc.description.abstractAuthorIn this work, an experimental evaluation of Gate-Induce Drain Leakage (GIDL) current is presented for nanowire and nanosheet-based SOI transistors. The effects of fin width and temperature increase are studied. Obtained results indicate that the increase in device width makes the GIDL current more sensitive to temperature increase. Three-dimensional numerical simulations have shown that despite the reverse junction leakage increase with temperature, leakage current in nanosheet and nanowire transistors is composed predominantly of GIDL current. The change in valence and conduction bands caused by temperature increase favors the band-to-band tunneling, which is responsible for the worsening of GIDL at high temperatures.
dc.identifier.citationDE SOUZA, M.; CERDEIRA, A.; ESTRADA, M.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs. IEEE Journal of the Electron Devices Society, p. 1-8, 2023.
dc.identifier.doi10.1109/JEDS.2023.3264876
dc.identifier.issn2168-6734
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4770
dc.relation.ispartofIEEE Journal of the Electron Devices Society
dc.rightsAcesso Aberto
dc.subject.otherlanguageCurrent measurement
dc.subject.otherlanguageGIDL
dc.subject.otherlanguagehigh temperature
dc.subject.otherlanguageLogic gates
dc.subject.otherlanguageNanoscale devices
dc.subject.otherlanguagenanosheet MOSFET
dc.subject.otherlanguagenanowire MOSFET
dc.subject.otherlanguageSOI
dc.subject.otherlanguageTemperature measurement
dc.subject.otherlanguageThreshold voltage
dc.subject.otherlanguageTransistors
dc.subject.otherlanguageVoltage measurement
dc.titleHigh Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-85153384510
fei.scopus.subjectDrain leakage
fei.scopus.subjectDrain leakage current
fei.scopus.subjectGate-induce drain leakage
fei.scopus.subjectHighest temperature
fei.scopus.subjectMOSFETs
fei.scopus.subjectNanoscale device
fei.scopus.subjectNanosheet MOSFET
fei.scopus.subjectNanowire MOSFETs
fei.scopus.subjectSOI
fei.scopus.subjectTemperature increase
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85153384510&origin=inward
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