On-resistance and harmonic distortion in graded-channel SOI FD MOSFET

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorALEMAN, M. A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorVANCAILLIE, L.
dc.contributor.authorFLANDRE, D.
dc.date.accessioned2023-08-26T23:50:49Z
dc.date.available2023-08-26T23:50:49Z
dc.date.issued2004-11-05
dc.description.abstractIn this paper we analyze the advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications, i.e. on-resistance and non-linear harmonic distortion, is supported by measurements on conventional and Graded-Channel (GC) fully depleted (FD) SOI MOSFETs. The quasi linear I-V characteristics of GC transistors demonstrate a decrease of the on-resistance as the length of the low doped region into the channel is augmented and an improvement of the third order harmonic distortion (HD3), when compared with conventional transistors. A full comparison method between conventional and GC SOI MOSFETs is presented considering HD3 evolution with on-resistance tuning under low voltage of operation, demonstrating the significant advantages of the asymmetrical long channel transistors. © 2004 IEEE.
dc.description.firstpage118
dc.description.lastpage121
dc.identifier.citationCERDEIRA, A.; ALEMAN, M. A.; PAVANELLO, M. A.; MARTINO, J. A.; VANCAILLIE, L.; FLANDRE, D. On-resistance and harmonic distortion in graded-channel SOI FD MOSFET. Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS, p. 118-121, nov. 2004.
dc.identifier.issn1541-6275
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5059
dc.relation.ispartofProceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS
dc.rightsAcesso Restrito
dc.titleOn-resistance and harmonic distortion in graded-channel SOI FD MOSFET
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-28444432964
fei.scopus.subjectConventional transistors
fei.scopus.subjectOn-resistance tuning
fei.scopus.subjectQuasi-linear operation
fei.scopus.subjectTunable filters
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=28444432964&origin=inward
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