Analysis of the linear kink effect in partially depleted SOI nMOSFET's

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dc.contributor.authorAGOPIAN, P. G.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2023-08-26T23:50:38Z
dc.date.available2023-08-26T23:50:38Z
dc.date.issued2005-09-07
dc.description.abstractIn this work, the occurrence of the linear kink effect (LKE) in PD SOI nMOSFETs is investigated experimentally and by two-dimensional simulations. The experimental dependence of the LKE on the drain voltage and the channel length is reported, showing a reduction of the second peak in the transconductance when the transistor channel length decrease. By two-dimensional numerical simulations, the impact of various parameters on this second peak has been studied, namely, the gate current level, the carrier lifetime, the increase of the body potential and the threshold voltage variation.
dc.description.firstpage512
dc.description.lastpage519
dc.description.volumePV 2005-08
dc.identifier.citationAGOPIAN, P. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Analysis of the linear kink effect in partially depleted SOI nMOSFET's. Proceedings - Electrochemical Society, v. PV 2005-08, p. 512-519, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5048
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleAnalysis of the linear kink effect in partially depleted SOI nMOSFET's
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-31744450183
fei.scopus.subjectBody potential
fei.scopus.subjectDrain voltage
fei.scopus.subjectLinear kink effect
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744450183&origin=inward
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