Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor

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dc.contributor.authorCerdeira A.
dc.contributor.authorAleman M.A.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorVancaillie L.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2005
dc.description.abstractIn this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications as on-resistance and nonlinear harmonic distortion, is supported by both measurements and simulations of conventional and graded-channel (GC) fully depleted silicon-on-insultor (SOI) MOSFETs. The quasi-linear current-voltage characteristics of GC transistors show a decrease of the on-resistance as the length of the low doped region in the channel is increased, as well as an improvement in the third-order harmonic distortion (HD3), when compared with conventional transistors. A method for full comparison between conventional and GC SOI MOSFETs is presented, considering HD3 evolution with on-resistance tuning under low voltage of operation. Results demonstrate the significant advantages provided by the asymmetrical long channel transistors. © 2005 IEEE.
dc.description.firstpage967
dc.description.issuenumber5
dc.description.lastpage972
dc.description.volume52
dc.identifier.citationCERDEIRA, Antonio; ALEMÁN, Miguel; PAVANELLO, Marcelo A.; MARTINO, João Antonio; VANCAILLIE, Laurent; FLANDRE, Denis. Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor. I.E.E.E. Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005.
dc.identifier.doi10.1109/TED.2005.846327
dc.identifier.issn0018-9383
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1059
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageGraded-channel MOSFET
dc.subject.otherlanguageHarmonic distortion
dc.subject.otherlanguageIntegral function method (IFM)
dc.subject.otherlanguageMOSFET-C filters
dc.subject.otherlanguageQuasi-linear resistor
dc.titleAdvantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
dc.typeArtigo
fei.scopus.citations48
fei.scopus.eid2-s2.0-18844377426
fei.scopus.subjectGraded channel MOSFET
fei.scopus.subjectIntegral function method (IFM)
fei.scopus.subjectMOSFET-C filters
fei.scopus.subjectOn-resistance tuning
fei.scopus.subjectQuasi linear resistor
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=18844377426&origin=inward
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