The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation

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dc.contributor.authorFINO, L. N. S.
dc.contributor.authorMarcilei Aparecida Guazzelli da Silveira
dc.contributor.authorChristian Renaux
dc.contributor.authorFLANDRE, Denis
dc.contributor.authorGIMENEZ, S. P.
dc.date.accessioned2019-08-19T23:45:28Z
dc.date.available2019-08-19T23:45:28Z
dc.date.issued2015
dc.description.firstpage43
dc.description.issuenumber1
dc.description.lastpage48
dc.description.volume10
dc.identifier.citationFINO, L. N. S.; Marcilei Aparecida Guazzelli da Silveira; Christian Renaux; FLANDRE, Denis; GIMENEZ, S. P.. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43-48, 2015.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1305
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleThe Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiationpt_BR
dc.typeArtigopt_BR
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