The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation
dc.contributor.author | FINO, L. N. S. | |
dc.contributor.author | Marcilei Aparecida Guazzelli da Silveira | |
dc.contributor.author | Christian Renaux | |
dc.contributor.author | FLANDRE, Denis | |
dc.contributor.author | GIMENEZ, S. P. | |
dc.date.accessioned | 2019-08-19T23:45:28Z | |
dc.date.available | 2019-08-19T23:45:28Z | |
dc.date.issued | 2015 | |
dc.description.firstpage | 43 | |
dc.description.issuenumber | 1 | |
dc.description.lastpage | 48 | |
dc.description.volume | 10 | |
dc.identifier.citation | FINO, L. N. S.; Marcilei Aparecida Guazzelli da Silveira; Christian Renaux; FLANDRE, Denis; GIMENEZ, S. P.. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43-48, 2015. | |
dc.identifier.issn | 1807-1953 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1305 | |
dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
dc.rights | Acesso Restrito | |
dc.title | The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation | pt_BR |
dc.type | Artigo | pt_BR |