Analysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°C

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dc.contributor.authorSANTOS, C. D. G. DOS
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:29Z
dc.date.available2023-08-26T23:50:29Z
dc.date.issued2006-09-01
dc.description.abstractThis paper analyzes the impact of silicon film thickness reduction in some analog parameters of Gate-All-Around (GAA) transistors using the graded-channel (GC) architecture. The study was done at high temperatures (up to 300°C) through two-dimensional simulations. As the silicon film is reduced an improvement on the Early voltage was observed. However, for GC GAA devices this improvement is more pronounced at room temperature than at high temperatures. The output swing voltage (Vos) was also studied and it decreases while reducing the silicon thickness. Regarding the GC GAA the Vos is larger than conventional GAA in 50 nm thick transistors. © 2006 The Electrochemical Society.
dc.description.firstpage283
dc.description.issuenumber1
dc.description.lastpage291
dc.description.volume4
dc.identifier.citationSANTOS, C. D. G. DOS; PAVANELLO, M. A.; MARTINO, J. A. Analysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°C. ECS Transactions, v. 4, n. 1, p. 283-291, sept. 2006.
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5038
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAnalysis of silicon thickness reduction on analog parameters of GC GAA SOI transistors operating up to 300°C
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-33847630716
fei.scopus.subjectGate-All-Around (GAA) transistors
fei.scopus.subjectGraded channel architecture
fei.scopus.subjectSilicon films
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847630716&origin=inward
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