Electrical behavior of the Diamond layout style for MOSFETs in X-rays ionizing radiation environments

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dc.contributor.authorGimenez S.P.
dc.contributor.authorAlati D.M.
dc.date.accessioned2019-08-19T23:45:29Z
dc.date.available2019-08-19T23:45:29Z
dc.date.issued2015
dc.description.abstract© 2015 Elsevier B.V. All rights reserved.This paper aims to describe some innovative layout styles, which are capable to boost the electrical performance and, in the same time, the Total Ionizing Dose (TID) tolerance of Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET), without burdening the current planar Complementary MOS (CMOS) Integrated Circuits (ICs) manufacturing processes. To illustrate the potential use of these new alternative devices in analog and digital CMOS ICs applications, this work focuses on the Diamond layout style for MOSFET that presents hexagonal gate geometry. The new effects associated to this innovative transistor structure and its modeling are presented and discussed in detail. Some experimental results are illustrated to evidence its use mainly in space and medical CMOS ICs applications.
dc.description.firstpage85
dc.description.issuenumber1
dc.description.lastpage90
dc.description.volume148
dc.identifier.citationGimenez, Salvador Pinillos; Alati, Daniel Manha. Electrical behavior of the diamond layout style for MOSFETs in X-rays ionizing radiation environments. Microelectronic Engineering, v. 148, n. 1, p. 85-90, 2015.
dc.identifier.doi10.1016/j.mee.2015.09.001
dc.identifier.issn0167-9317
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1309
dc.relation.ispartofMicroelectronic Engineering
dc.rightsAcesso Restrito
dc.subject.otherlanguageDEPAMBBRE
dc.subject.otherlanguageDiamond (hexagonal gate geometry)
dc.subject.otherlanguageLCE
dc.subject.otherlanguagePAMDLE
dc.subject.otherlanguageTotal ionizing dose (TID)
dc.subject.otherlanguageX-rays radiation
dc.titleElectrical behavior of the Diamond layout style for MOSFETs in X-rays ionizing radiation environments
dc.typeArtigo
fei.scopus.citations6
fei.scopus.eid2-s2.0-84942055379
fei.scopus.subjectDEPAMBBRE
fei.scopus.subjectGate geometry
fei.scopus.subjectLCE
fei.scopus.subjectPAMDLE
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84942055379&origin=inward
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