Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS

Página do item simplificado
dc.contributor.authorGimenez S.P.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2006
dc.description.abstractThis paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. Different design targets were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with OTAs made with conventional SOI nMOSFETs, are performed showing that the GC OTAs presents larger open-loop voltage gain without degrading the phase margin, unit gain frequency and slew rate simultaneously with a significant required die area reduction depending on LLD/L ratio used. Circuit simulations and experimental results are used to qualify the analysis. © 2005 Elsevier Ltd. All rights reserved.
dc.description.firstpage31
dc.description.issuenumber1
dc.description.lastpage37
dc.description.volume37
dc.identifier.citationGIMENEZ, Salvador Pinillos; PAVANELLO, Marcelo A.; MARTINO, João Antonio; FLANDRE, Denis. Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. Microelectronics Journal, v. 37, n. 1, p. 31-37, 2006.
dc.identifier.doi10.1016/j.mejo.2005.06.010
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1062
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog circuits
dc.subject.otherlanguageGraded-channel SOI nMOSFET
dc.subject.otherlanguageOperational transconductance amplifier
dc.subject.otherlanguageOTA
dc.subject.otherlanguageSilicon on insulator technology
dc.titleGain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS
dc.typeArtigo
fei.scopus.citations15
fei.scopus.eid2-s2.0-28044432778
fei.scopus.subjectAnalog circuits
fei.scopus.subjectGraded-channel SOI nMOSFET
fei.scopus.subjectOperational transconductance amplifier
fei.scopus.subjectOTA
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=28044432778&origin=inward
Arquivos
Coleções
Artigos