COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis

dc.contributor.authorBOAS, A. C.V.
dc.contributor.authorALBERTON, S. G.
dc.contributor.authorDE MELO, M. A. A.
dc.contributor.authorRoberto Santos
dc.contributor.authorRenato Giacomini
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorSEIXAS, L. E.
dc.contributor.authorFINCO, S.
dc.contributor.authorPALOMO, F. R.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.date.accessioned2022-11-01T06:04:13Z
dc.date.available2022-11-01T06:04:13Z
dc.date.issued2022-11-09
dc.description.abstract© 2022 Institute of Physics Publishing. All rights reserved.Gallium nitride commercial transistors (GaN FET) are great candidates as power devices tolerant to the effects of Total ionizing dose (TID). Therefore, we have evaluated its robustness by analysing parameters in its characteristic parameters. Devices were exposed to a 10 keV X-ray source accumulating a total of 350 krad(Si). However, results indicate that the tested components are more tolerant to the effects of TID when in on-state mode rather than the off-mode, that is, when the device is working, which is good news for COTS applications in environments subject to the effects of ionizing radiation.
dc.description.issuenumber1
dc.description.volume2340
dc.identifier.citationBOAS, A. C.V.; ALBERTON, S. G.; DE MELO, M. A. A.; SANTOS, R.; GIACOMONI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; GUAZZELLI, M. A. COTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis. Journal of Physics: Conference Series, v. 2340, n. 1, nov. 2021.
dc.identifier.doi10.1088/1742-6596/2340/1/012045
dc.identifier.issn1742-6596
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4620
dc.relation.ispartofJournal of Physics: Conference Series
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140230595&origin=inward. Acesso em 08 dez. 2022.
dc.titleCOTS Tolerant to Total Ionizing Dose (TID): AlGaN/GaNbased transistor 10 KeV X-ray Analysis
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85140230595
fei.scopus.subjectCharacteristics parameters
fei.scopus.subjectExposed to
fei.scopus.subjectOff mode
fei.scopus.subjectOn state
fei.scopus.subjectPower devices
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.subjectX-ray sources
fei.scopus.updated2024-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140230595&origin=inward
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