Multi-layers lateral SOI PIN photodiodes for solar cells applications
N/D
Tipo de produção
Artigo de evento
Data de publicação
2019-08-05
Texto completo (DOI)
Periódico
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
SILVA, F. A. DA
Rodrigo Doria
ANDRADE, M. G. C. DE
Orientadores
Resumo
© 2019 IEEE.In this paper, a lateral PIN photodiode based on a SOI wafer has been studied through numerical simulations. This device can be used as a solar cell embedded in a CMOS circuit in order to propose autonomous ultralow-power circuits (ULP). Efficiency behavior has been analyzed for different semiconductor materials and configurations in order to reach the best performance. The results indicate that a layer with a different semiconductor, with different characteristics such as forbidden band, mobility and light absorption, improves the generated power in the device, suggesting that the cell can feed circuits that need larger power.
Citação
SILVA, F. A. DA; DORIA, R.; ANDRADE, M. G. C. DE. Multi-layers lateral SOI PIN photodiodes for solar cells applications. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, aug. 2019.
Palavras-chave
Keywords
Germanium; Multi-layer; PIN photodiode; Solar cells
Assuntos Scopus
CMOS circuits; Forbidden band; Lateral PIN photodiodes; Pin photodiode; SOI wafers; Ultra-low-power circuits