Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires
dc.contributor.author | MOLTO, A.R. | |
dc.contributor.author | PAZ, B. C. | |
dc.contributor.author | Marcelo Antonio Pavanello | |
dc.contributor.authorOrcid | https://orcid.org/0000-0003-1361-3650 | |
dc.date.accessioned | 2022-01-12T21:56:26Z | |
dc.date.available | 2022-01-12T21:56:26Z | |
dc.date.issued | 2019-05-19 | |
dc.description.abstract | This work studies the influence of fin width and back bias on the low-frequency noise of long channel fully depleted SOI nanowires. Devices with fin widths of 20nm, 45nm and 105nm were studied under different back bias (Vsub) conditions, varying Vsub from-40V to 40V. Nanowires operate in linear regime with gate voltage overdrive varying from OmV to 200mV. Results show low-frequency noise increase for both positive and negative back bias for long channel devices. For the input referred noise power spectral density as a function of Wfin,it was possible to observe a slight increase of SVG with Wfindecrease. | |
dc.identifier.citation | MOLTO, A.R.; PAZ, B. C. Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires. Latin American Electron Devices Conference, LAEDC 2019, Mayo, 2019. | |
dc.identifier.doi | 10.1109/LAED.2019.8714739 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3725 | |
dc.relation.ispartof | Latin American Electron Devices Conference, LAEDC 2019 | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Back bias | |
dc.subject.otherlanguage | Fully depleted SOI | |
dc.subject.otherlanguage | low-frequency noise | |
dc.subject.otherlanguage | Nanowire | |
dc.title | Influence of fin width and back bias on the low-frequency noise of long channel SOI nanowires | |
dc.type | Artigo de evento | |
fei.scopus.citations | 0 | |
fei.scopus.eid | 2-s2.0-85067177410 | |
fei.scopus.subject | Back bias | |
fei.scopus.subject | Fully depleted SOI | |
fei.scopus.subject | Gate voltages | |
fei.scopus.subject | Linear regime | |
fei.scopus.subject | Long channel devices | |
fei.scopus.subject | Low-Frequency Noise | |
fei.scopus.subject | Noise power spectral density | |
fei.scopus.subject | Work study | |
fei.scopus.updated | 2025-02-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85067177410&origin=inward |