Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures

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dc.contributor.authorNOVO. C.
dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorBAPTISTA, J.
dc.contributor.authorRenato Giacomini
dc.contributor.authorAFZALINA, A.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T21:58:11Z
dc.date.available2022-01-12T21:58:11Z
dc.date.issued2017
dc.description.abstract© 2017 IEEE.Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, an MOS back-gate can control the charge density inside this region, allowing quantum efficiency improvement. This paper reports experimental results of SOI p-i-n photodetectors with different intrinsic lengths in the 300-500-K range, simultaneously considering back-gate bias and temperature influences. Indeed, the back-gate bias becomes very effective in terms of quantum efficiency control with up to 52.4% for LI =1μm at T=500 K in inversion mode, while in accumulation, the resulting efficiency was 48.2% at T=500 K for the device with LI= 10 μm at UV. These variations are related to the behavior of dark current and the recombination rate of the devices.
dc.description.firstpage1641
dc.description.issuenumber6
dc.description.lastpage1648
dc.description.volume17
dc.identifier.citationNOVO. C.; BÜHLER, R. T.; BAPTISTA, J.; GIACOMINI, R.; AFZALINA, A.; FLANDRE, D.Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v.17, n. 6, p. 1641-1648, March, 2017.
dc.identifier.doi10.1109/JSEN.2017.2647848
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3844
dc.relation.ispartofIEEE Sensors Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguagedark current
dc.subject.otherlanguageintrinsic length
dc.subject.otherlanguagePhotodiode
dc.subject.otherlanguagephotosensitive
dc.subject.otherlanguagePIN
dc.subject.otherlanguagequantum efficiency
dc.titleQuantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-85015252558
fei.scopus.subjectDepletion region
fei.scopus.subjectEfficiency improvement
fei.scopus.subjectintrinsic length
fei.scopus.subjectP-i-n photodetectors
fei.scopus.subjectphotosensitive
fei.scopus.subjectRecombination rate
fei.scopus.subjectTemperature influence
fei.scopus.subjectWavelength ranges
fei.scopus.updated2023-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85015252558&origin=inward
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