Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures
dc.contributor.author | NOVO. C. | |
dc.contributor.author | BÜHLER, Rudolf Theoderich | |
dc.contributor.author | BAPTISTA, J. | |
dc.contributor.author | Renato Giacomini | |
dc.contributor.author | AFZALINA, A. | |
dc.contributor.author | FLANDRE, D. | |
dc.contributor.authorOrcid | https://orcid.org/0000-0002-7934-9605 | |
dc.contributor.authorOrcid | https://orcid.org/0000-0003-1060-2649 | |
dc.date.accessioned | 2022-01-12T21:58:11Z | |
dc.date.available | 2022-01-12T21:58:11Z | |
dc.date.issued | 2017 | |
dc.description.abstract | © 2017 IEEE.Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, an MOS back-gate can control the charge density inside this region, allowing quantum efficiency improvement. This paper reports experimental results of SOI p-i-n photodetectors with different intrinsic lengths in the 300-500-K range, simultaneously considering back-gate bias and temperature influences. Indeed, the back-gate bias becomes very effective in terms of quantum efficiency control with up to 52.4% for LI =1μm at T=500 K in inversion mode, while in accumulation, the resulting efficiency was 48.2% at T=500 K for the device with LI= 10 μm at UV. These variations are related to the behavior of dark current and the recombination rate of the devices. | |
dc.description.firstpage | 1641 | |
dc.description.issuenumber | 6 | |
dc.description.lastpage | 1648 | |
dc.description.volume | 17 | |
dc.identifier.citation | NOVO. C.; BÜHLER, R. T.; BAPTISTA, J.; GIACOMINI, R.; AFZALINA, A.; FLANDRE, D.Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures. IEEE Sensors Journal, v.17, n. 6, p. 1641-1648, March, 2017. | |
dc.identifier.doi | 10.1109/JSEN.2017.2647848 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3844 | |
dc.relation.ispartof | IEEE Sensors Journal | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | dark current | |
dc.subject.otherlanguage | intrinsic length | |
dc.subject.otherlanguage | Photodiode | |
dc.subject.otherlanguage | photosensitive | |
dc.subject.otherlanguage | PIN | |
dc.subject.otherlanguage | quantum efficiency | |
dc.title | Quantum Efficiency Improvement of SOI p-i-n Lateral Diodes Operating as UV Detectors at High Temperatures | |
dc.type | Artigo | |
fei.scopus.citations | 5 | |
fei.scopus.eid | 2-s2.0-85015252558 | |
fei.scopus.subject | Depletion region | |
fei.scopus.subject | Efficiency improvement | |
fei.scopus.subject | intrinsic length | |
fei.scopus.subject | P-i-n photodetectors | |
fei.scopus.subject | photosensitive | |
fei.scopus.subject | Recombination rate | |
fei.scopus.subject | Temperature influence | |
fei.scopus.subject | Wavelength ranges | |
fei.scopus.updated | 2023-11-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85015252558&origin=inward |