Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs

dc.contributor.authorMUCI, Juan
dc.contributor.authorLATORRE-REY, A. D.
dc.contributor.authorGARCIA-SANCHEZ, Francisco
dc.contributor.authorLUGO-MUÑOZ, D.
dc.contributor.authorORTIZ-CONDE, Adelmo
dc.contributor.authorHO, C. S.
dc.contributor.authorLIOU, J. J.
dc.contributor.authorPAVANELLO, Marcelo A.
dc.contributor.authorTREVISOLI, Renan Doria
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2010
dc.description.firstpage103
dc.description.issuenumber2
dc.description.lastpage109
dc.description.volume5
dc.identifier.citationMUCI, Juan; LATORRE-REY, A. D.; GARCIA-SANCHEZ, Francisco; LUGO-MUÑOZ, D.; ORTIZ-CONDE, Adelmo; HO, C. S.; LIOU, J. J.; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria. Extraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 103-109, 2010.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1078
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleExtraction of Mobility Degradation and Source-and-Drain Resistance in MOSFETspt_BR
dc.typeArtigopt_BR
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