Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications

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dc.contributor.authorDE SOUZA, R. N.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:00:29Z
dc.date.available2022-01-12T22:00:29Z
dc.date.issued2014-09-05
dc.description.abstractThis paper describes an experimental comparative study of the total ionizing dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layouts (CnM). Because of the special characteristic of the bird's beaks regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to increase the devices TID hardness for analog integrated circuits (IC) applications in terms of the unity voltage gain frequency (fT) without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.
dc.identifier.citationDE SOUZA, R. N.; GUAZZELLI; GIMENEZ, S. Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Sept. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940117
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4003
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageanalog circuits
dc.subject.otherlanguageradiation hardness by design
dc.subject.otherlanguageTID
dc.subject.otherlanguagetotal ionizing dose
dc.subject.otherlanguageunit voltage gain frequency
dc.subject.otherlanguageWave layout
dc.titleImproving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications
dc.typeArtigo de evento
fei.scopus.citations6
fei.scopus.eid2-s2.0-84912100016
fei.scopus.subjectAdditional costs
fei.scopus.subjectComparative studies
fei.scopus.subjectManufacturing process
fei.scopus.subjectMetal oxide semiconductor
fei.scopus.subjectRadiation hardness
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.subjectTotal ionizing dose effects
fei.scopus.subjectVoltage gain
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912100016&origin=inward
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