Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts

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dc.contributor.authorGiacomini R.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:24Z
dc.date.available2019-08-19T23:45:24Z
dc.date.issued2006
dc.description.abstractThis work presents a new and simple approach for modeling silicon on insulator metal-oxide-semiconductor (MOS) dc characteristics for nonrectangular layout devices, based on decomposition of the original shape into trapezoidal parts and on an accurate but simple model of the trapezoidal layout transistor. Analytical expressions relating geometrical parameters and terminal current and voltages are presented for several shapes, such as L, U, T, and S, and other well-known devices such as the edgeless transistor and the asymmetric trapezoidal gate transistor. The proposed closed-form analytical expressions show good agreement with measured data and three-dimensional simulation results. © 2006 The Electrochemical Society. All rights reserved.
dc.description.firstpage218
dc.description.issuenumber3
dc.description.lastpage222
dc.description.volume153
dc.identifier.citationGIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C; MARTINO, J. A.. Modeling Silicon on Insulator MOS Transistor with Nonrectangular-Gate Layouts. Journal of the Electrochemical Society, v. 153, n. 3, p. 218-222, 2006.
dc.identifier.doi10.1149/1.2160451
dc.identifier.issn0013-4651
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1262
dc.relation.ispartofJournal of the Electrochemical Society
dc.rightsAcesso Restrito
dc.titleModeling silicon on insulator MOS transistors with nonrectangular-gate layouts
dc.typeArtigo
fei.scopus.citations8
fei.scopus.eid2-s2.0-32044437336
fei.scopus.subjectNonrectangular-gate layouts
fei.scopus.subjectTerminal currents
fei.scopus.subjectThree-dimensional simulation
fei.scopus.subjectTrapezoidal layout transistors
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=32044437336&origin=inward
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