Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorALEMAN, M. A.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2023-08-26T23:50:44Z
dc.date.available2023-08-26T23:50:44Z
dc.date.issued2005-09-07
dc.description.abstractThe performance evaluation of conventional and graded-channel SOI MOSFETs operating as tunable resistors is performed from room temperature down to 90 K. The on-resistance, total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the on-resistance reduces with the temperature lowering and is smaller in any GC SOI than in conventional SOI due to the effective channel length reduction. The total harmonic distortion is weakly temperature dependent and decreases in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion is strongly temperature influenced, increasing 15 dB at 90 K with respect to room temperature operation. Conventional and GC SOI have similar third order harmonic distortion in all studied temperatures.
dc.description.firstpage520
dc.description.lastpage528
dc.description.volumePV 2005-08
dc.identifier.citationPAVANELLO, M. A.; CERDEIRA, A.; MARTINO, J. A.; ALEMAN, M. A.; FLANDRE, D. Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments. Proceedings - Electrochemical Society, PV 2005-08, p. 520-528, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5054
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleImplementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744437932
fei.scopus.subjectGC transistors
fei.scopus.subjectGraded channel
fei.scopus.subjectTunable resistors
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744437932&origin=inward
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