Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects

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dc.contributor.authorGiacomini R.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:23Z
dc.date.available2019-08-19T23:45:23Z
dc.date.issued2008
dc.description.abstractFin field effect transistors (FinFETS) are silicon-on-insulator (SOI) transistors with three-dimensional structures. As a result of some fabrication-process limitations (as nonideal anisotropic overetch) some FinFETs have inclined surfaces, which results in trapezoidal cross sections instead of rectangular sections, as expected. This geometric alteration results in some device issues, like carrier profile, threshold voltage, and corner effects. This work analyzes these consequences based on three-dimensional numeric simulation of several dual-gate and triple-gate FinFETs. The simulation results show that the threshold voltage depends on the sidewall inclination angle and that this dependence varies according to the body doping level. The corner effects also depend on the inclination angle and doping level. © 2008 The Electrochemical Society.
dc.description.firstpageH213
dc.description.issuenumber4
dc.description.lastpageH217
dc.description.volume155
dc.identifier.citationGiacomini, Renato; Martino, Joa?o Antonio; GIACOMINI, R.. Trapezoidal Cross-Sectional Influence on FinFET Threshold Voltage and Corner Effects. Journal of the Electrochemical Society, v. 155, p. H213-H217, 2008.
dc.identifier.doi10.1149/1.2833317
dc.identifier.issn0013-4651
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1252
dc.relation.ispartofJournal of the Electrochemical Society
dc.rightsAcesso Restrito
dc.titleTrapezoidal cross-sectional influence on FinFET threshold voltage and corner effects
dc.typeArtigo
fei.scopus.citations25
fei.scopus.eid2-s2.0-40549138505
fei.scopus.subjectCorner effects
fei.scopus.subjectTrapezoidal cross sections
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=40549138505&origin=inward
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