An analytical model for the non-linearity of triple gate SOI MOSFETs

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dc.contributor.authorRodrigo Doria
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:03:22Z
dc.date.available2022-01-12T22:03:22Z
dc.date.issued2011-01-05
dc.description.abstractThis work proposes a physically-based analytical model for the non-linearity of Triple-Gate MOSFETs. The model describes the second order harmonic distortion (HD2), usually the major non-linearity source, as a function of the device dimensions, the series resistance, the low field mobility and the mobility degradation factor (θ). The model was applied to transistors of different channel lengths and fin widths and allowed to conclude that θ is the parameter which most contributes for the increase of HD2. The model was validated for both unstrained and strained FinFETs. ©The Electrochemical Society.
dc.description.firstpage189
dc.description.issuenumber5
dc.description.lastpage194
dc.description.volume35
dc.identifier.citationDORIA, R.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.; PAVANELLO, M. A. An analytical model for the non-linearity of triple gate SOI MOSFETs. ECS Transactions, v. 35, n. 5, p. 189-194, 2011.
dc.identifier.doi10.1149/1.3570795
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4199
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleAn analytical model for the non-linearity of triple gate SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-79960888003
fei.scopus.subjectAnalytical model
fei.scopus.subjectChannel length
fei.scopus.subjectFin widths
fei.scopus.subjectFinFETs
fei.scopus.subjectLow field mobility
fei.scopus.subjectMobility degradation
fei.scopus.subjectNon-Linearity
fei.scopus.subjectSecond orders
fei.scopus.subjectSeries resistances
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectTriple-gate
fei.scopus.subjectTriple-gate MOSFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960888003&origin=inward
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