Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:05:34Z
dc.date.available2022-01-12T22:05:34Z
dc.date.issued2006-08-05
dc.description.abstractIn this work, the influence of the twin-gate structure on the gate-induced floating body effects in thin gate oxide partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs is investigated through two-dimensional numerical simulations, which are validated by experimental results. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be shown, as well as the relation between the total resistance and the effective mobility degradation factor. It will be demonstrated that a similar reduction of the linear kink effect is obtained in a twin-gate structure and in a conventional SOI transistor with an external resistance in series. © 2006 Elsevier Ltd. All rights reserved.
dc.description.firstpage681
dc.description.issuenumber8
dc.description.lastpage685
dc.description.volume37
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS. Microelectronics Journal, v. 37, n. 8, p. 681-685, Aug. 2006.
dc.identifier.doi10.1016/j.mejo.2005.12.003
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4348
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageLinear kink effect
dc.subject.otherlanguageSeries resistance
dc.subject.otherlanguageSilicon-on-insulator
dc.subject.otherlanguageTunneling currents
dc.subject.otherlanguageTwin-gate structure
dc.subject.otherlanguageUltra-thin gate oxides
dc.titleImpact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-33746861172
fei.scopus.subjectLinear kink effect
fei.scopus.subjectSeries resistance
fei.scopus.subjectSilicon-on-insulator
fei.scopus.subjectTunneling currents
fei.scopus.subjectTwin-gate structure
fei.scopus.subjectUltra-thin gate oxides
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33746861172&origin=inward
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