Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior

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dc.contributor.authorPeruzzi V.V.
dc.contributor.authorGimenez S.P.
dc.contributor.authorAgopian P.G.D.
dc.contributor.authorSilveira M.A.G.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.date.accessioned2019-08-19T23:47:18Z
dc.date.available2019-08-19T23:47:18Z
dc.date.issued2013
dc.description.abstractThis paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel widths and lengths of the devices. The experimental results show that the intrinsic voltage gain and the unit voltage gain frequency for tensile stressed devices always present a higher immunity to the X-ray radiation (up to 50 Mrad). © The Electrochemical Society.
dc.description.firstpage177
dc.description.issuenumber5
dc.description.lastpage185
dc.description.volume53
dc.identifier.citationPERUZZI, V. V.; Gimenez, S. P.; AGOPIAN, P. G. D.; SILVEIRA, M. A. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.. Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior. ECS Transactions (Online), v. 53, n. 5, p. 177-185, 2013.
dc.identifier.doi10.1149/05305.0177ecst
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1452
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleComparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84885630007
fei.scopus.subjectAnalog behavior
fei.scopus.subjectChannel widths
fei.scopus.subjectComparative studies
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectVoltage gain
fei.scopus.subjectX ray radiation
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84885630007&origin=inward
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