Influence of fin shape and temperature on conventional and strained MuGFETs' analog parameters

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dc.contributor.authorBUHLER, R. T.
dc.contributor.authorGiacomini R.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2023-08-26T23:49:29Z
dc.date.available2023-08-26T23:49:29Z
dc.date.issued2011-09-05
dc.description.abstractThis work evaluates two important technological variations of Triple-Gate FETs: the use of strained silicon and the occurrence of non-rectangular body cross-section. The anaysis is focused on the electrical parameters for analog applications, and covers a temperature range from 150 K to 400 K. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes showed that the fin shape can have a major role in some analog parameters than the use of the strained silicon technology, helping to improve those parameters under certain circumstances. The highest intrinsic voltage gains were obtained for strained devices with top fin width larger than bottom at low temperature. Besides the intrinsic voltage gain, were also studied: the threshold voltage, subthreshold swing, drain induced barrier lowering, channel resistance, total harmonic distortion, transconductance, transconductance to drain current ratio, output conductance, Early voltage, drain voltage saturation and unity gain frequency.
dc.description.firstpage94
dc.description.issuenumber2
dc.description.lastpage101
dc.description.volume6
dc.identifier.citationBUHLER, R. T.; Giacomini R.; MARTINO, J. A. Influence of fin shape and temperature on conventional and strained MuGFETs' analog parameters. Journal of Integrated Circuits and Systems. v. 6, n. 2, p. 94-101, sept. 2011.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4976
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageLow Temperature
dc.subject.otherlanguageNon-Rectangular Fin
dc.subject.otherlanguageSOI MuGFET
dc.subject.otherlanguageStrain
dc.titleInfluence of fin shape and temperature on conventional and strained MuGFETs' analog parameters
dc.typeArtigo
fei.scopus.citations0
fei.scopus.eid2-s2.0-82255179680
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=82255179680&origin=inward
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