Responsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode

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dc.contributor.authorNOVO, C.
dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorZAPATA, R.
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T21:58:36Z
dc.date.available2022-01-12T21:58:36Z
dc.date.issued2016-09-03
dc.description.abstract© 2016 IEEE.Lateral PIN diodes can be used as photo-detectors in a wide wavelength range, including blue and UV radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, a MOS gate can control the charge density inside this region, allowing responsivity control. This work reports experimental results of gated PIN photodetectors designed and fabricated in a SiGe CMOS process. It was shown that, when the photodiode is illuminated with short wavelength radiation, the gate bias becomes very effective in terms of responsivity control, with up to 163% raise at UV. Indeed, based on the penetration-depth-dependent absorption of different wavelegths, our device has shown good color selective responsivity.
dc.identifier.citationNOVO, C.; BÜHLER, R. T.; ZAPATA, R.; GIACOMINI, R. Responsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, Sept. 2016.
dc.identifier.doi10.1109/SBMicro.2016.7731366
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3873
dc.relation.ispartofSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rightsAcesso Restrito
dc.subject.otherlanguageblue
dc.subject.otherlanguagegate
dc.subject.otherlanguagephotodiode
dc.subject.otherlanguagered
dc.subject.otherlanguageresponsivity
dc.titleResponsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-85007371851
fei.scopus.subjectblue
fei.scopus.subjectDepletion region
fei.scopus.subjectgate
fei.scopus.subjectP-i-n photodetectors
fei.scopus.subjectResponsivity
fei.scopus.subjectShort wavelengths
fei.scopus.subjectVertical devices
fei.scopus.subjectWavelength ranges
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85007371851&origin=inward
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