Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

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dc.contributor.authorDoria R.T.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.contributor.authorMartino J.A.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2011
dc.description.abstractThis work investigates the harmonic distortion (HD) in 2-MOS balanced structures composed of triple gate FinFETs. HD has been evaluated through the determination of the third-order harmonic distortion (HD3), since this represents the major non-linearity source in balanced structures. The 2-MOS structures with devices of different channel lengths (L) and fin widths (W fin) have been studied operating in the linear region as tunable resistors. The analysis was performed as a function of the gate voltage, aiming to verify the correlation between operation bias and HD3. The physical origins of the non-linearities have been investigated and are pointed out. Being a resistive circuit, the 2-MOS structure is generally projected for a targeted on-resistance, which has also been evaluated in terms of HD3. The impact of the application of biaxial strain has been studied for FinFETs of different dimensions. It has been noted that HD3 reduces with the increase of the gate bias for all the devices and this reduction is more pronounced both in narrower and in longer devices. Also, the presence of strain slightly diminishes the non-linearity at a similar bias. However, a drawback associated with the use of strain engineering consists in a significant reduction of the on-resistance with respect to unstrained devices. © 2011 Elsevier Ltd. All rights reserved.
dc.description.firstpage99
dc.description.issuenumber1
dc.description.lastpage105
dc.description.volume62
dc.identifier.citationDORIA, Rodrigo Trevisoli; SIMOEN, Eddy; CLAEYS, Cor; MARTINO, João Antonio; PAVANELLO, Marcelo A.; PAVANELLO, M. A.. Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS. Solid-State Electronics, v. 62, p. 99-105, 2011.
dc.identifier.doi10.1016/j.sse.2011.01.045
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1084
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog operation
dc.subject.otherlanguageBalanced structures
dc.subject.otherlanguageBiaxial strain
dc.subject.otherlanguageFinFET
dc.subject.otherlanguageHarmonic distortion
dc.subject.otherlanguageSilicon-on-insulator
dc.titleHarmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
dc.typeArtigo
fei.scopus.citations3
fei.scopus.eid2-s2.0-79957939206
fei.scopus.subjectAnalog operation
fei.scopus.subjectBalanced structures
fei.scopus.subjectBiaxial strain
fei.scopus.subjectFinFET
fei.scopus.subjectSilicon on insulator
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79957939206&origin=inward
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