Technological parameters scaling influence on the analog performance of Graded-Channel SOI nMOSFET transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2014-01-20
Texto completo (DOI)
Periódico
2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
4
Autores
ASSALTI, R.
Marcelo Antonio Pavanello
Michelly DE Souza
FLANDRE, D.
Orientadores
Resumo
This paper aims at analyzing, through two-dimensional numerical simulations and experimental results, the influence of technological parameters downscaling on the analog performance of Graded-Channel FD SOI nMOSFET transistors. Front gate oxide and silicon film thicknesses, channel doping concentration, total channel and lightly doped region lengths have been varied to target the highest intrinsic voltage gain.
Citação
ASSALTI, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Technological parameters scaling influence on the analog performance of Graded-Channel SOI nMOSFET transistors. 2014 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2014 - Conference Proceedings. Jan. 2014.
Palavras-chave
Keywords
Analog parameters; Graded-Channel; intrinsic voltage gain; SOI nMOSFET; technological parameters
Assuntos Scopus
Analog parameters; Graded channels; Intrinsic voltage gains; NMOSFET; Technological parameters