An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices

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dc.contributor.authorTrevisoli R.D.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:12Z
dc.date.available2019-08-19T23:45:12Z
dc.date.issued2012
dc.description.abstractTriple-gate devices are considered a promising solution for sub-20 nm era. Strain engineering has also been recognized as an alternative due to the increase in the carriers mobility it propitiates. The simulation of strained devices has the major drawback of the stress non-uniformity, which cannot be easily considered in a device TCAD simulation without the coupled process simulation that is time consuming and cumbersome task. However, it is mandatory to have accurate device simulation, with good correlation with experimental results of strained devices, allowing for in-depth physical insight as well as prediction on the stress impact on the device electrical characteristics. This work proposes the use of an analytic function, based on the literature, to describe accurately the strain dependence on both channel length and fin width in order to simulate adequately strained triple-gate devices. The maximum transconductance and the threshold voltage are used as the key parameters to compare simulated and experimental data. The results show the agreement of the proposed analytic function with the experimental results. Also, an analysis on the threshold voltage variation is carried out, showing that the stress affects the dependence of the threshold voltage on the temperature. © 2011 Elsevier Ltd. All rights reserved.
dc.description.firstpage519
dc.description.issuenumber3
dc.description.lastpage524
dc.description.volume52
dc.identifier.citationTrevisoli, Renan Doria; CLAEYS, Cor; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO; MARTINO, J. A.; SIMOEN, Eddy. An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectronics and Reliability, v. 52, n. 3, p. 519-524, 2012.
dc.identifier.doi10.1016/j.microrel.2011.10.007
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1115
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Restrito
dc.titleAn analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices
dc.typeArtigo
fei.scopus.citations2
fei.scopus.eid2-s2.0-84857367831
fei.scopus.subjectAnalytic functions
fei.scopus.subjectAnalytic method
fei.scopus.subjectChannel length
fei.scopus.subjectCoupled process
fei.scopus.subjectDevice simulations
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectExperimental data
fei.scopus.subjectFin widths
fei.scopus.subjectGood correlations
fei.scopus.subjectKey parameters
fei.scopus.subjectMaximum transconductance
fei.scopus.subjectNonuniformity
fei.scopus.subjectStrain dependence
fei.scopus.subjectStrain engineering
fei.scopus.subjectStress dependence
fei.scopus.subjectStress impact
fei.scopus.subjectTCAD simulation
fei.scopus.subjectThreshold voltage variation
fei.scopus.subjectTriple gate devices
fei.scopus.subjectTriple-gate
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84857367831&origin=inward
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