Back bias impact on effective mobility of p-type nanowire SOI MOSFETs

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dc.contributor.authorPAZ, B .C.
dc.contributor.authorCASSE, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:06Z
dc.date.available2022-01-12T21:57:06Z
dc.date.issued2018-08-27
dc.description.abstractIn this work we investigated the impact of back bias on the effective mobility of p-type Ω-gate nanowire SOI MOSFETs. Evaluation is performed through both measurements and 3D numerical simulations. Electrostatic potential, electric field and holes density are studied through simulations to explain transconductance degradation with back bias increase. Holes mobility linear dependence on back bias is found to be related to the inversion channel density and its position along the silicon thickness. Besides, this work also sheds light on the dependence of the drain current in vertically stacked NW with back bias, as its behavior is determined by the bottom Ω-gate level.
dc.identifier.citationPAZ, B .C.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O. PAVANELLO, M. A. Back bias impact on effective mobility of p-type nanowire SOI MOSFETs. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511505
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3770
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageBack bias
dc.subject.otherlanguageMobility
dc.subject.otherlanguageNanowire
dc.subject.otherlanguageSOI
dc.subject.otherlanguageTridimensional numerical simulations
dc.titleBack bias impact on effective mobility of p-type nanowire SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-85057400450
fei.scopus.subject3-D numerical simulation
fei.scopus.subjectBack bias
fei.scopus.subjectEffective mobilities
fei.scopus.subjectElectrostatic potentials
fei.scopus.subjectGate levels
fei.scopus.subjectInversion channels
fei.scopus.subjectLinear dependence
fei.scopus.subjectSilicon thickness
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057400450&origin=inward
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