Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

Página do item simplificado
dc.contributor.authorASSALTI, R.
dc.contributor.authorDORIA, RODRIGO T.
dc.contributor.authorFLANDRE, Denis
dc.contributor.authorSOUZA, Michelly de
dc.date.accessioned2019-08-19T23:45:16Z
dc.date.available2019-08-19T23:45:16Z
dc.date.issued2017
dc.description.firstpage62
dc.description.issuenumber2
dc.description.lastpage70
dc.description.volume12
dc.identifier.citationASSALTI, R.; DORIA, RODRIGO T.; FLANDRE, Denis; SOUZA, Michelly de. Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 12, n. 2, p. 62-70, 2017.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1180
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Restrito
dc.titleOrigin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETspt_BR
dc.typeArtigopt_BR
Arquivos
Coleções
Artigos