Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET

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dc.contributor.authorDe Souza Fino L.N.
dc.contributor.authorDavini Neto E.
dc.contributor.authorDa Silveira M.A.G.
dc.contributor.authorRenaux C.
dc.contributor.authorFlandre D.
dc.contributor.authorGimenez S.P.
dc.date.accessioned2019-08-19T23:47:19Z
dc.date.available2019-08-19T23:47:19Z
dc.date.issued2015
dc.description.abstract© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) manufactured with octagonal gate geometry and the standard counterpart. Our main focus is on integrated transceivers for wireless communications and smart-power dc/dc converters for mobile electronics, where the transistor is used as the key switching element. It is shown that this innovative layout can reduce the total ionizing dose (TID) effects due to the special characteristics of the OCTO SOI MOSFET bird's beak regions, where longitudinal electrical field lines in these regions are not parallel to the drain and source regions. Consequently, the parasitic MOSFETs associated with these regions are practically deactivated.
dc.description.firstpage105024
dc.description.issuenumber10
dc.description.volume30
dc.identifier.citationDE SOUZA FINO, LEONARDO NAVARENHO; DAVINI NETO, ENRICO; DA SILVEIRA, MARCILEI APARECIDA GUAZZELLI; RENAUX, CHRISTIAN; FLANDRE, DENIS; GIMENEZ, SALVADOR PINILLOS. Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET. Semiconductor Science and Technology (Print), v. 30, n. 10, p. 105024, 2015.
dc.identifier.doi10.1088/0268-1242/30/10/105024
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1462
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.subject.otherlanguagedeactivate the parasitic MOSFET in the birds beak regions effect DEPAMBBRE
dc.subject.otherlanguageintegrated smart power dc/dc converter
dc.subject.otherlanguagelongitudinal corner effect
dc.subject.otherlanguagelow cost SOI
dc.subject.otherlanguageoctagonal layout style
dc.titleBoosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
dc.typeArtigo
fei.scopus.citations13
fei.scopus.eid2-s2.0-84945156576
fei.scopus.subjectCorner effects
fei.scopus.subjectLow costs
fei.scopus.subjectMOS-FET
fei.scopus.subjectoctagonal layout style
fei.scopus.subjectSmart power
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84945156576&origin=inward
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