An improved model for the triangular SOI misalignment test structure

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorRenato Giacomini
dc.contributor.authorMARINO, J. A.
dc.date.accessioned2023-08-26T23:50:56Z
dc.date.available2023-08-26T23:50:56Z
dc.date.issued2004-09-07
dc.description.abstractThe triangular misalignment test structure is an arrangement of MOS transistors to calculate the poly and source/drain diffusion misalignment as a function of drain current differences. Although these structures have non-rectangular shapes, which may be detrimental for the design, the advantage of measuring currents instead of voltage differences make them very useful. This work presents a new analytic misalignment error model for thin-film, fully depleted SOI technology, using non rectangular devices. Three-dimensional numerical simulation is used as a reference for models comparison and verification. These simulation results show that the proposed analytical model presents an improved performance compared to those available in the literature.
dc.description.firstpage57
dc.description.lastpage62
dc.description.volume3
dc.identifier.citationGIACOMINI, R.; MARINO, J. A. An improved model for the triangular SOI misalignment test structure. Proceedings - Electrochemical Society, v. 3, p. 57-62, sept. 2023.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5067
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleAn improved model for the triangular SOI misalignment test structure
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-17044374427
fei.scopus.subjectDrain current
fei.scopus.subjectError calculations
fei.scopus.subjectGate structures
fei.scopus.subjectSpeed integrated circuits
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=17044374427&origin=inward
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