Study of circular gate SOI nMOSFET devices at high temperatures
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2008-05-12
Autores
ALMEIDA, L. M.
BELLODI, M.
BELLODI, M.
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International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008
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ALMEIDA, L. M.; ALMEIDA, L. M. Study of circular gate SOI nMOSFET devices at high temperatures. International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008, p. 17-24, mayo, 2008.
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The aim of this work is to evaluate the drain leakage current behavior in a Circular Gate (CG) SOI nMOSFET fabricated in 0.13 μm SOI CMOS technology. This technology is analyzed operating since room temperature up to 300°C, where the channel length and the geometrical drain bias terminal influence are analyzed in the drain leakage current behavior, when the devices are operating at high temperatures, through 3D numerical simulations. Since the CG SOI nMOSFET is not a symmetrical structure, it is possible to have two different configurations as following: the one which structure is configured with external drain and another one, with internal drain. Analyzing the drain leakage current behavior as a function of channel length at high temperatures, it is possible to observe that for the same channel length, as the temperature increases, it becomes higher and it increases as the channel length reduces. On the other hand, when the devices are operating with external drain, the drain leakage current becomes lower as compared to the internal drain, for both devices operating at same conditions. The results show that the drain leakage current depends strongly on the channel length and its density distribution is non uniform along the silicon film thickness. Besides it, also was observed that the drain leakage current depends on drain terminal configuration. Then, in order to understand the drain configuration influence in the drain leakage current behavior at high temperatures, the electric field was analyzed into the silicon film.