Impact of SEG on uniaxially strained MuGFET performance

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dc.contributor.authorPaula Agopian
dc.contributor.authorPACHECO, V. H.
dc.contributor.authorMARTINO J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-0886-7798
dc.date.accessioned2022-01-12T22:03:31Z
dc.date.available2022-01-12T22:03:31Z
dc.date.issued2011-05-05
dc.description.abstractThis work focuses on the impact of the source and drain Selective Epitaxial Growth (SEG) on the performance of uniaxially strained MuGFETs. With the channel length reduction, the normalized transconductance (gm.L/W) of unstressed MuGFETs decreases due to the series resistance and short channel effects (SCE), while the presence of uniaxial strain improves the gm. The competition between the series resistance (Rs) and the uniaxial strain results in a normalized gm maximum point for a specific channel length. Since the SEG structure influences both Rs and the strain in the channel, this work studies from room down to low temperature how these effects influence the performance of the triple-gate FETs. For lower temperatures, the strain-induced mobility enhancement increases and leads to a shift in the maximum point towards shorter channel lengths for devices without SEG. This shift is not observed for devices with SEG where the strain level is much lower. At 150 K the gm behavior of short channel strained devices with SEG is similar to the non SEG ones due to the better gm temperature enhancement for devices without SEG caused by the strain. For lower temperatures SEG structure is not useful anymore. © 2011 Elsevier Ltd. All rights reserved.
dc.description.firstpage13
dc.description.issuenumber1
dc.description.lastpage17
dc.description.volume59
dc.identifier.citationAGOPIAN, P.; PACHECO, V. H.; MARTINO J. A.; SIMOEN, E.; CLAEYS, C. Impact of SEG on uniaxially strained MuGFET performance. Solid-State Electronics, v. 59, n. 1, p. 13-17, Mayo, 2011.
dc.identifier.doi10.1016/j.sse.2011.01.009
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4209
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageLow temperature
dc.subject.otherlanguageMuGFET
dc.subject.otherlanguageSEG
dc.subject.otherlanguageStrained silicon
dc.subject.otherlanguageTriple gate FET
dc.titleImpact of SEG on uniaxially strained MuGFET performance
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-79953046102
fei.scopus.subjectLow temperatures
fei.scopus.subjectMuGFET
fei.scopus.subjectSEG
fei.scopus.subjectStrained Silicon
fei.scopus.subjectTriple-gate
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79953046102&origin=inward
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