A charge-based continuous model for small-geometry graded-channel SOI MOSFET's
N/D
Tipo de produção
Artigo de evento
Data de publicação
2005-09-07
Periódico
Proceedings - Electrochemical Society
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
In this work a continuous model for analog simulation of short-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET is presented. Effects of channel length modulation and velocity saturation have been included in the model formulation, which is based on the series combination of two conventional SOI nMOSFETs, each one representing one of the regions of GC SOI MOSFET channel and its characteristics. Experimental results and numerical bidimensional simulations are used to validate the model with excellent agreement in both cases.
Citação
DE SOUZA, M.; PAVANELLO, M. A. A charge-based continuous model for small-geometry graded-channel SOI MOSFET's. Proceedings - Electrochemical Society, v. PV 2005-08, p. 482-491, sept. 2005.
Palavras-chave
Keywords
Assuntos Scopus
Graded channel; Short channel; Velocity saturation