A charge-based continuous model for small-geometry graded-channel SOI MOSFET's

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dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2023-08-26T23:50:39Z
dc.date.available2023-08-26T23:50:39Z
dc.date.issued2005-09-07
dc.description.abstractIn this work a continuous model for analog simulation of short-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET is presented. Effects of channel length modulation and velocity saturation have been included in the model formulation, which is based on the series combination of two conventional SOI nMOSFETs, each one representing one of the regions of GC SOI MOSFET channel and its characteristics. Experimental results and numerical bidimensional simulations are used to validate the model with excellent agreement in both cases.
dc.description.firstpage482
dc.description.lastpage491
dc.description.volumePV 2005-08
dc.identifier.citationDE SOUZA, M.; PAVANELLO, M. A. A charge-based continuous model for small-geometry graded-channel SOI MOSFET's. Proceedings - Electrochemical Society, v. PV 2005-08, p. 482-491, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5049
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleA charge-based continuous model for small-geometry graded-channel SOI MOSFET's
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744444629
fei.scopus.subjectGraded channel
fei.scopus.subjectShort channel
fei.scopus.subjectVelocity saturation
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744444629&origin=inward
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