A charge-based continuous model for small-geometry graded-channel SOI MOSFET's

Abstract

In this work a continuous model for analog simulation of short-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET is presented. Effects of channel length modulation and velocity saturation have been included in the model formulation, which is based on the series combination of two conventional SOI nMOSFETs, each one representing one of the regions of GC SOI MOSFET channel and its characteristics. Experimental results and numerical bidimensional simulations are used to validate the model with excellent agreement in both cases.