Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape

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dc.contributor.authorBuhler R.T.
dc.contributor.authorGiacomini R.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2009
dc.description.abstractThe trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (AV), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies. © 2009 IOP Publishing Ltd.
dc.description.firstpage115017
dc.description.issuenumber11
dc.description.lastpage12
dc.description.volume24
dc.identifier.citationBUHLER, R. T.; GIACOMINI, R. C.; PAVANELLO, Marcelo A.; MARTINO, João Antonio. Trapezoidal SOI FinFET analog parameters? dependence on cross-section shape. Semiconductor Science and Technology (Print), v. 24, p. 115017-12, 2009.
dc.identifier.doi10.1088/0268-1242/24/11/115017
dc.identifier.issn0268-1242
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1077
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.titleTrapezoidal SOI FinFET analog parameters' dependence on cross-section shape
dc.typeArtigo
fei.scopus.citations14
fei.scopus.eid2-s2.0-70450187421
fei.scopus.subjectAnalog design
fei.scopus.subjectAnalog parameters
fei.scopus.subjectChannel widths
fei.scopus.subjectElectrical characteristic
fei.scopus.subjectEtching process
fei.scopus.subjectFin widths
fei.scopus.subjectGain frequencies
fei.scopus.subjectGate capacitance
fei.scopus.subjectGeometric variations
fei.scopus.subjectInclination angles
fei.scopus.subjectNumeric simulation
fei.scopus.subjectOutput conductance
fei.scopus.subjectSidewall angles
fei.scopus.subjectSimulation result
fei.scopus.subjectSOI FinFETs
fei.scopus.subjectVertical direction
fei.scopus.subjectVoltage gain
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=70450187421&origin=inward
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