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Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05) ALBERTON, S G; MEDINA, N H; ADDED, N; AGUIAR, V A P; MENEGASSO, R; MACCHIONE, E L A; GUAZZELLI, Marcilei Aparecida
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.