Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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- Brazilian facilities to study radiation effects in electronic devices(2013-09-27) MEDINA, N.H.; Marcilei Aparecida Guazzelli; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; Renato Giacomini; MACCHIONE, E. L. A.; DE MELO, M. A. A.; OLIVEIRA, J. A.; Roberto Santos; SEIXAS, L. E.; TABACNIKS, M. H.© 2013 IEEE.Three facilities in Brazil are being prepared and upgraded to test and to qualify electronic devices regarding their tolerance to TID and SEE: a 60 kV X-ray source, a 1.7 MV Pelletron accelerator for low energy proton beams and an 8 MV Pelletron accelerator that produces heavy ion beams. MOSFET transistors were exposed to 10-keV X-rays and to 2.4 MeV protons extracted into air. During irradiation, characteristic curves were continuously measured to monitor the circuit's behavior relative to the accumulated dose. 12C, 16O, 28Si, 35Cl and 63Cu heavy ion beams were also used mostly to test the experimental setup, and verify beam uniformity at low fluence conditions, equilibrium charge state, and carbon stripper foil durability. To test the setup for SEE, a pMOS transistor was irradiated with 63 MeV 63Cu ions scattered at 15° by a 275 μg/cm2 gold foil. The setups are now available for TID and SEE studies in electronic devices.
- Reliability analysis of gamma-and X-ray TID effects, on a commercial AlGaN/GaN based FET(2021-01-05) BÔAS, A. C. V.; ALBERTON, S. G.; MEDINA, N. H.; AGUIAR, V. A. P.; MELO, M. A. A.; Roberto Santos; Renato Giacomini; CAVALCANTE, T. C.; VAZ, R. G.; JUNIOR E, C. F. P.; SEIXAS, L. E.; FINCO, S.; Marcilei Aparecida Guazzelli© 2021, Brazilian Microelectronics Society. All rights reserved.—In this work, measurements were taken to investigate the robustness of a GaN HEMT to Total Ionizing Dose (TID) by a60gmmax values are dependable of the dose rate.DVTH values due to the TID, in this device are independent of the dose rate and the radiation source. However, the DCo Source. These results will be compared with a previous X-ray based work. Therefore, we will be, primarily, comparing both radiation sources. The robustness was investigated through IDxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on-and off-state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Manly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the.
- Reliability Evaluation of Voters for Fault Tolerant Approximate Systems(2021-10-27) BALEN, T. R.; GONZALEZ, C. J.; OLIVEIRA, I. F. V.; SCHVITTZ, R. B.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; Marcilei Aparecida Guazzelli; MEDINA, N. H.; BUTZEN, P. F.This work presents a study on the reliability of voters for approximate fault tolerant systems in the context of single event effects. A first case study analyses different topologies of single-bit majority voters for logic circuits by means of fault injection by simulation. In these simulations a previous analysis is performed identifying the critical diffusion areas of the physical implementation according to the voter input vector. Additionally, as second case study, practical heavy ion experiments on different architectures of software-based approximate voters for mixed-signal applications are also presented, and the cross section of each voter is evaluated. The system comprising the voter was irradiated in two distinct experiments with an 16O ion beam, producing an effective $LET$ at the active region of 5.5 MeV/mg/cm2. Results of both case-studies allow identifying the most tolerant voter architectures (among the studied ones) for approximate computing applications under single event effects.