Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Impact of using Octogonal Layout Style in Planar Power MOSFETs(2022-08-22) DA SILVA, G. A.; Salvador Gimenez© 2022 IEEE.Previous studies have already shown that the use of alternative gate shapes for planar and tridimensional MOSFETs are capable of boosting their analog and digital electrical performances and their ionizing radiations robustness. In this scenario, this work has the objective to study the impact of the use of octagonal layout style (OCTO), as the basic cell, to the implementing of the Planar Power MOSFET (PPM). The main results of this paper show that the PPM layouted with OCTO layout styles, as the basic cells, are able to improve the drain saturation current (IDS-sat) about 668%%, in relation to that implemented with conventional rectangular layout style, considering that they present the same gate area and bias conditions. Therefore, this type of layout approach can be considered an alternative layout to improve the electrical performance of PPMs.
- Boosting the performance of the planar power MOSFET By using Diamond layout style(2014-09-05) DA SILVA, G. A.; Salvador Gimenez© 2014 IEEE.This manuscript introduces and experimentally investigates, for the first time, the Planar Power MOSFETs implemented with Diamond (hexagonal gate geometry) Metal-Oxide-Semiconductor Field Effect Transistor with different a angles, as a basic cell, in comparison to the homologous Multifinger PPM, regarding the same gate die area and bias conditions. Using the DPPM as output current driver (switch) in digital integrated circuits applications, we can remarkably boost the PPM electrical performance in relation to the MPPM, considering the same gate area (AG) and bias conditions (BC).