Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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- Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS(2006-08-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.In this work, the influence of the twin-gate structure on the gate-induced floating body effects in thin gate oxide partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs is investigated through two-dimensional numerical simulations, which are validated by experimental results. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be shown, as well as the relation between the total resistance and the effective mobility degradation factor. It will be demonstrated that a similar reduction of the linear kink effect is obtained in a twin-gate structure and in a conventional SOI transistor with an external resistance in series. © 2006 Elsevier Ltd. All rights reserved.
- The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs(2006) CAMILO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 μm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (VZTC) is proposed in the linear and the saturation region. The influence of the temperature mobility degradation on VZTC is analyzed for PD and FD devices. Experimental results show that the temperature mobility degradation is larger in FD than in PD devices, which is responsible for the VZTC decrement observed in FD instead of the increment observed in PD devices when the temperature increases. The analysis takes into account temperature dependence model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with experimental results in spite of the simplification used for the VZTC model as a function of temperature in the linear and the saturation region. © 2006 Elsevier Ltd. All rights reserved.
- Study of the linear kink effect in PD SOI nMOSFETs(2007-01-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.We present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width. © 2006 Elsevier Ltd. All rights reserved.