Artigos

Resultados da Pesquisa

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Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs
(2012-03-17) BÜHLER, Rudolf Theoderich; MARTINO, J. A.; AGOPIAN, P. G. D.; Renato Giacomini
This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance. © 2012 IEEE.
An analytical estimation model for the spreading resistance of Double-Gate FinFETs
(2012-03-17) MALHEIRO, C. T.; PEREIRA, A. S. N.; Renato Giacomini
The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations. © 2012 IEEE.