Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-03-17
Texto completo (DOI)
Periódico
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
BÜHLER, Rudolf Theoderich
MARTINO, J. A.
AGOPIAN, P. G. D.
Renato Giacomini
Orientadores
Resumo
This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance. © 2012 IEEE.
Citação
BÜHLER, R. T.; MARTINO, J. A.; AGOPIAN, P. G. D.; GIACOMINI, R. Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs. 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Marh, 2012.
Palavras-chave
Keywords
fin width; SOI MuGFET; Uniaxial Stress Profiles
Assuntos Scopus
3D simulations; Device performance; Electric characterization; Electrical performance; Fin widths; SOI MuGFET; SOI n-MOSFETs; Stress transfer; Triple-gate; Uniaxial stress