Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs
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2012-03-17
Autores
BÜHLER, Rudolf Theoderich
MARTINO, J. A.
AGOPIAN, P. G. D.
Renato Giacomini
MARTINO, J. A.
AGOPIAN, P. G. D.
Renato Giacomini
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2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
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BÜHLER, R. T.; MARTINO, J. A.; AGOPIAN, P. G. D.; GIACOMINI, R. Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs. 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Marh, 2012.
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This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance. © 2012 IEEE.