Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Brazilian facilities to study radiation effects in electronic devices(2013-09-27) MEDINA, N.H.; Marcilei Aparecida Guazzelli; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; Renato Giacomini; MACCHIONE, E. L. A.; DE MELO, M. A. A.; OLIVEIRA, J. A.; Roberto Santos; SEIXAS, L. E.; TABACNIKS, M. H.© 2013 IEEE.Three facilities in Brazil are being prepared and upgraded to test and to qualify electronic devices regarding their tolerance to TID and SEE: a 60 kV X-ray source, a 1.7 MV Pelletron accelerator for low energy proton beams and an 8 MV Pelletron accelerator that produces heavy ion beams. MOSFET transistors were exposed to 10-keV X-rays and to 2.4 MeV protons extracted into air. During irradiation, characteristic curves were continuously measured to monitor the circuit's behavior relative to the accumulated dose. 12C, 16O, 28Si, 35Cl and 63Cu heavy ion beams were also used mostly to test the experimental setup, and verify beam uniformity at low fluence conditions, equilibrium charge state, and carbon stripper foil durability. To test the setup for SEE, a pMOS transistor was irradiated with 63 MeV 63Cu ions scattered at 15° by a 275 μg/cm2 gold foil. The setups are now available for TID and SEE studies in electronic devices.
- Experimental equipment design and setup for measuring electronic devices under magnetic fields(2016-09-03) PERIN, A. L.; BÜHLER, Rudolf Theoderich; Renato Giacomini© 2016 IEEE.This work proposes a complete equipment and setup solution for testing of non-encapsulated electronic devices under moderate magnetic fields. The equipment was implemented, tested and used to characterize three different MOS transistor topologies, especially designed for magnetic field susceptibility evaluation. The probe station with the proposed solution, allows the measurement of devices with quality and repeatability from 0 to 330mT.
- Semiconductor bending setup for electrical characterization of mechanical stress(2017-09-01) BÜHLER, Rudolf Theoderich; PERIN, A. L.; Renato Giacomini© 2017 IEEE.This work proposes and describes in details a complete setup solution for testing of non-encapsulated electronic devices under mechanical stress. The equipment was implemented and calibrated to later use in electrical characterization of devices, such as MOSFETs and diodes under controlled mechanical stress. The semiconductor bending equipment allows the electrical characterization of devices using already existent probe stations in laboratories without additional modifications, as presented here.