Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Applying the diamond layout style for FinFET(2012-12-02) NETO, E. D.; Salvador GimenezThe FinFET devices have been on focus in recent years due its elevated gate control capability over the channel region, what gives this technology a scalability advantage against others. The planar Diamond MOSFET layout, on the other hand, has also shown great results regarding its possible use on integrated circuits applications. In this paper, the concept of the Diamond layout style is extended to its three-dimensional version, the Diamond FinFET. 3D numerical simulations are performed in order to compare the possible advantages and disadvantages between this innovative layout style and its conventional counterpart, keeping the same gate area, geometric factor and bias conditions. It is shown that this new device inherits the qualities of its planar MOSFET version and it is proved that it can reduce significantly the die area of the analog and digital (mixed) low-power low-voltage integrated circuits due to its high capability as current driver. © The Electrochemical Society.
- New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs(2022-01-05) GALEMBECK, E. H. S.; Salvador GimenezIEEEIt is known that the hexagonal (Diamond) layout style is capable of boosting the electrical performance and ionizing radiation tolerances of metal-oxide-semiconductor field-effect-transistors (MOSFETs). In order to further improve the figures of merit of these devices, it was proposed a hybrid gate geometry that is an evolution of the hexagonal layout style, entitled Half-Diamond. This innovative layout style is able to generate the same electrical effects that the Diamond is able to generate, and it is innovative because it is capable of further reducing the effective channel lengths of MOSFETs implemented with Diamond and rectangular layout styles. Thus, this work describes a comparative study by 3-D numerical simulations data and experimental data between the MOSFETs implemented with the Half-Diamond and Conventional layout styles. The main results found have indicated that the saturation drain current and transconductance of MOSFET layouted with Half-Diamond are 36% and 27% higher, respectively, than those measured in the Conventional MOSFET. Other results have shown that the innovative half-diamond layout style (HDLS) for MOSFETs is capable of reducing the dissipated electrical power in approximately 62% and, therefore, it is an alternative hardness-by-design strategy to remarkably improve complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) energy efficiency. Besides, the electrical behaviors of longitudinal corner effect (LCE), parallel connection of MOSFETs with different channel lengths effect (PAMDLE), and deactivation of parasitic MOSFETs in the bird's beak regions effect (DEPAMBBRE) of the MOSFETs implemented with the HDLS are studied in detail to justify the results found.
- The Second Generation of the Layout Styles for MOSFETs to Further Boosting the Electrical Performance of Analog MOSFETs and CMOS ICs(2021-08-27) GALEMBECK, E.H. S.; SILVA, G. A. D.; Salvador Gimenez©2021 IEEE.This article describes, for the first time, the study of electrical behavior of the first element belonging to the family of Second Generation of layout styles for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), entitled Half-Diamond. It was conceived in order to further boosting the electrical performance of the analog MOSFETs in relation to the one found in Diamond MOSFETs (hexagonal gate shape). This innovative layout style has by objective further enhance the Longitudinal Corner Effect (LCE) and mainly the Parallel Connections of MOSFETs with Different Channel Lengths Effect (PAMDLE) by the means of further reducing of the effective channel lengths of Diamond MOSFETs in relation to those measured in the conventional (rectangular gate geometry) ones (RMs). The main results found by the three-dimensional numerical simulations indicates that the Half-Diamond MOSFET (HDM) is able to provide a saturation drain current 13% higher than the one observed in the RM counterpart. Furthermore, the electrical behaviors of LCE, PAMDLE and DEPAMBRE in HDM are analyzed in detail by observing the electrical behavior of the electrostatic potentials, longitudinal electric fields and drain current densities. c2021 IEEE.
- LCE and PAMDLE Effects from Diamond Layout for MOSFETs at High-Temperature Ranges(2021-08-05) GALEMBECK, E. H. S.; Salvador Gimenez© 1963-2012 IEEE.This article presents, for the first time, a study about of behavior of the intrinsic effects from diamond layout style [longitudinal corner effect (LCE) and PArallel connection of MOSFETs with Different channel Lengths Effect (PAMDLE)] for metal-oxide-semiconductor field-effect transistors (MOSFETs) influenced by wide high-temperature ranges. These effects are capable of boosting the electrical performance of analog MOSFETs in relation to that of the standard MOSFET (rectangular gate shape). First, we have developed an experimental comparative study between MOSFETs implemented with the hexagonal layout style diamond MOSFET (DM) and its rectangular MOSFET (RM) counterpart, regarding that they present the same channel width and gate area, operating in a wide high-temperature range (from 300 to 573 K). These devices were manufactured with the technology of bulk complementary MOS (CMOS) integrated circuits (ICs) of 180 nm. The experimental results have shown that DM has obtained a better electrical performance of analog MOSFETs than the one observed in RM counterpart (for example, gains of 67% for saturation drain current and 90% for the transconductance), regardless of temperatures in which they were exposed. 3-D numerical simulations were used to justify the better electrical performance of DMs due to the LCE and PAMDLE effects, in relation to one of the RM counterparts, by observing the behavior of electrostatic potentials, longitudinal electric fields, and drain current densities of the devices as the temperature increases. Besides, a study about the short-channel effect has shown that DM can suppress this effect more effectively than RM at room temperature due to a smaller reduction in effective channel length of DM.