Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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- Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs(2015) Buhler R.T.; Agopian P.G.D.; Collaert N.; Simoen E.; Claeys C.; Martino J.A.© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: uniaxial stress, biaxial stress and biaxial + uniaxial stress. Four different fin dimensions are evaluated: a narrow and a wide transistor, combined with a short or a long device. It is shown that the stress distribution and the device performance exhibit a dependence on the fin dimensions. For uniaxially strained devices, the dimensions are important as the bending of the silicon required to induce stress in the channel depends on its size. However, for biaxially strained devices the plane of etching in the silicon fin is important, determining the degradation of the stress components. The combination of the two types of stress results in an improvement of some stress components and an overall improvement in the maximum transconductance.
- Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs(2012) Pavanello M.A.; Souza M.D.; Martino J.A.; Simoen E.; Claeys C.This work presents the analog performance of n-type triple-gate MuGFETs with high-k dielectrics and TiN gate material fabricated in 45° rotated SOI substrates comparing their performance with standard MuGFETs fabricated without substrate rotation. Different fin widths are studied for temperatures ranging from 250 K up to 400 K. The results of transconductance, output conductance, transconductance over drain current ratio, intrinsic voltage gain and unit-gain frequency are studied. It is observed that the substrate rotation improves the carrier mobility of narrow MuGFETs at any temperature because of the changing in the conduction plane at the sidewalls from (1 1 0) to (1 0 0). For lower temperatures, the improvement of the carrier mobility of rotated MuGFETs is more noticeable as well as the rate of mobility improvement with the temperature decrease is larger. The output conductance is weakly affected by the substrate rotation. Although this improvement in the transconductance of rotated MuGFETs is negligibly transferred to the intrinsic voltage gain, the unity-gain frequency of rotated device is improved due to the larger carrier mobility in the entire range of temperatures studied. © 2011 Elsevier Ltd. All rights reserved.