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URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798

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20171

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Periódico: search.filters.ispartof.2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017Assunto: search.filters.subject.Junctionless Nanowires Transistors

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    Artigo de evento 7 Citação(ões) na Scopus
    Lateral spacers influence on the effective channel length of junctionless nanowire transistors
    (2017-10-16) TREVISOLI, R.; Rodrido Doria; Michelly De Souza; Marcelo Antonio Pavanello
    This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.