Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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4 resultados
Resultados da Pesquisa
Artigo de evento 0 Citação(ões) na Scopus Analysis of harmonic distortion in graded-channel SOI MOSFETS at high temperatures(2004-09-11) Marcelo Antonio Pavanello; CERDEIRA, A.; MARTINO, J. A.; ALEMAN, M. A.; FLANDRE, D.An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature up to 423 K. The total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the total harmonic distortion decreases as the length of the lightly doped region is increased in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion increases with the length of lightly doped region. The temperature increase tends to reduce the total harmonic distortion and the third order harmonic.Artigo de evento 1 Citação(ões) na Scopus On-resistance and harmonic distortion in graded-channel SOI FD MOSFET(2004-11-05) CERDEIRA, A.; ALEMAN, M. A.; Marcelo Antonio Pavanello; MARTINO, J. A.; VANCAILLIE, L.; FLANDRE, D.In this paper we analyze the advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications, i.e. on-resistance and non-linear harmonic distortion, is supported by measurements on conventional and Graded-Channel (GC) fully depleted (FD) SOI MOSFETs. The quasi linear I-V characteristics of GC transistors demonstrate a decrease of the on-resistance as the length of the low doped region into the channel is augmented and an improvement of the third order harmonic distortion (HD3), when compared with conventional transistors. A full comparison method between conventional and GC SOI MOSFETs is presented considering HD3 evolution with on-resistance tuning under low voltage of operation, demonstrating the significant advantages of the asymmetrical long channel transistors. © 2004 IEEE.Artigo de evento 0 Citação(ões) na Scopus Implementation of tunable resistors using graded-channel SOI MOSFETs operating in cryogenic environments(2005-09-07) Marcelo Antonio Pavanello; CERDEIRA, A.; MARTINO, J. A.; ALEMAN, M. A.; FLANDRE, D.The performance evaluation of conventional and graded-channel SOI MOSFETs operating as tunable resistors is performed from room temperature down to 90 K. The on-resistance, total harmonic distortion and third order harmonic distortion have been adopted as figures of merit. It is shown that the on-resistance reduces with the temperature lowering and is smaller in any GC SOI than in conventional SOI due to the effective channel length reduction. The total harmonic distortion is weakly temperature dependent and decreases in GC transistors, due to reduction of the effective voltage amplitude that is applied on the conventionally doped part of the channel. On the other hand, the third order harmonic distortion is strongly temperature influenced, increasing 15 dB at 90 K with respect to room temperature operation. Conventional and GC SOI have similar third order harmonic distortion in all studied temperatures.Artigo de evento 4 Citação(ões) na Scopus Low temperature and channel engineering influence on harmonic distortion of SOI nMOSFETs for analog applications(2005-05-20) Marcelo Antonio Pavanello; CERDEIRA, A.; ALEMAN, M. A.; Joao Antonio Martino; VANCAILLE, L.; FLANDRE, D.An evaluation of the harmonic distortion in conventional and graded-channel SOI MOSFETs is performed from room temperature down to 90 K. The total harmonic distortion as a function of the transconductance over drain current ratio has been adopted as figure of merit. It is shown that the total harmonic distortion increases as the input voltage rises and the temperature is lowered. The use of lateral channel engineering in graded-channel transistors appreciably reduces the total harmonic distortion. The dependence of harmonic distortion on length of the lightly doped region is very weak.