Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs(2019-08-05) D'OLIVEIRA, L. M.; KILCHYTSKA, V.; FLANDRE, D.; Michelly De Souza© 2019 IEEE.This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.
- Analysis of harmonic distortion of asymmetric self-cascode association of SOI nMOSFETs operating in saturation(2014-01-20) D'OLIVEIRA, L. M.; Rodrigo Doria; Marcelo Antonio Pavanello; Michelly De Souza; FLANDRE, D.This paper presents an experimental analysis of the harmonic distortion of asymmetric self-cascode (A-SC) association of SOI transistors. This goal is achieved by comparing the A-SC to the symmetric self-cascode (S-SC) configuration with different channel lengths. The non-linearity data have been obtained by applying the Integral Function Method to experimental measurements, for the evaluation of the total and third-order harmonic distortion. The results show that the asymmetric self-cascode provides lower total harmonic distortion than S-SC for all studied channel length associations. If a target distortion level is fixed, the A-SC enables an increase of input signal amplitude. On the other hand, smaller input signal amplitude and distortion are verified in the A-SC when fixing the output amplitude.