Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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2 resultados
Resultados da Pesquisa
- Influence of the crystal orientation on the operation of junctionless nanowire transistors(2017-01-03) TREVISOLI, R.; Rodrido Doria; Michelly De Souza; Marcelo Antonio Pavanello; BARRAUD, S.; VINET, M.This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors.
- Use of back gate bias to improve the performance of n- and p-type UTBB transistors-based self-cascode structures applied to current mirrors(2017-10-10) Rodrido Doria; TREVISOLI, R.; Michelly De Souza; Marcelo Antonio Pavanello; FLANDRE, D.This paper aims at demonstrating, for the first time, the use of back bias to improve the analog performance of current mirrors composed by self-cascode structures with 25 nm-long n- and p-type UTBB SOI MOSFETs. The use of back gate bias has shown to enhance the intrinsic gain of p-type devices by about 7 dB, making it higher than the one from a single device with equivalent channel length whereas the mirroring precision has shown to be improved by 20 % with respect to single devices.