Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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2011 - 20132

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Periódico: search.filters.ispartof.ECS TransactionsAssunto: search.filters.subject.Analog behavior

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 1 Citação(ões) na Scopus
    Global and/or local strain influence on p- and nMuGFET analog performance
    (2011-01-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.
    In this work, the analog performance is evaluated for tri-gate p-and nMuGFETs processed with and without the implementation of different global or local strain engineering techniques. For n-channel devices, the intrinsic voltage gain showed to be worse for strained devices when the fin is narrow. Only for wider fins the voltage gain increases with the strain efficiency due to mobility enhancement. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. In spite of the smaller impact of strain engineering, pMuGFETs show better analog behavior for all studied parameters. ©The Electrochemical Society.
  • N/D
    Artigo de evento 0 Citação(ões) na Scopus
    Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature
    (2013-05-16) NEMER, J. P.; Michelly De Souza; FLANDRE, D.; Marcelo Antonio Pavanello
    In this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature. © The Electrochemical Society.