Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20112

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Periódico: search.filters.ispartof.ECS TransactionsAssunto: search.filters.subject.Inversion modes

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 1 Citação(ões) na Scopus
    The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors
    (2011-01-05) Rodrigo Doria; Marcelo Antonio Pavanello; TREVISOLI, R. D.; Michelly De Souza; LEE, C. W.; FERAIN, I.; DEHDASHTI AKHAVAN, N.; YAN, R.; RAZAVI, P.; YU, R.; KRANTI, A.; COLINGE, J. P.
    This paper evaluates the roles of the electric field (E) and the density of carries (n) in the drain conductance of Junctionless Nanowire Transistors (JNTs). The behavior of E and n presented by JNTs with the variation of the gate and the drain voltages has been compared to the one presented by Inversion Mode (M) Trigate devices of similar dimensions. It has been shown that the lower drain output conductance exhibited by Junctionless transistors with respect to the IM ones is correlated not only to the differences in the mobility and its degradation but also to the electric field, the density of carries and the first order derivative of these variables with respect the drain voltage. ©The Electrochemical Society.
  • N/D
    Artigo de evento 13 Citação(ões) na Scopus
    Impact of the series resistance in the I-V characteristics of nMOS junctionless nanowire transistors
    (2011-09-02) Rodrigo Doria; TREVISOLI, D. T.; Marcelo Antonio Pavanello
    The series resistance (Rs) of Junctionless Nanowire Transistors (JNTs) with different doping concentrations was extracted from 473 K down to 100 K. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices and the impact of the series resistance on the drain current of the devices was evaluated. The R S analysis was carried out through experimental results and devices tridimensional numerical simulations. According to the study, R S presents opposite behavior with the temperature variation in EVI triple transistors and JNTs. In the latter, a reduction on R S is noted with the temperature increase, whereas a resistance decrease is obtained with the temperature lowering in IM devices. The parasitic resistance in JNTs affects the drain current in such a way that there may not be a Zero Temperature Coefficient (ZTC) operation point. © The Electrochemical Society.